device s pecification APQ84SN06AH 60v / 84a n - channel mosfe t rev c 1 / 8 1 description these n - channel enhancement mode power field effect transistors are produced using pl a nar stripe, dmos technology. this advanced technology has been especially tailored to minimize on - state resistance, provide superior switching performance, a nd withstand high e n ergy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switched mode power supplies, a c tive power factor correction based on half bridge topology . 2 features ? 60 v / 84a ? r d s(on) = 9 m ( typ ) v gs =10v, i d ? fast switching = 42a ? 100% avalanche tested ? improved dv/dt capability. . 3 absolute maximum ratings t c = 25c unless otherwise noted symbol parameter APQ84SN06AH - xxm0 units APQ84SN06AH - xxj0 to - 220 v dss drain - source voltage 60 v i d drain current - continuous (t c - contin u ous (t = 25c) c 84 = 100c) a 50.4 a i dm drain current ? pulsed 336 a v gs gate - source voltage 20 v e as single pulsed avalanche energy 320 mj i ar avalanche current 50 a e ar repetitive avalanche energy 17 mj dv/dt peak diode recovery dv/dt 4.0 v/ns p d power dissipation (t c - de - ate above 25c = 25c) 100 w 0.8 w/c t j , t stg operating and storage temperature r ange - 55 to +1 50 c t l soldering temperature for 10 seconds 300 c * note : repetitive rating: pulse width limited by maximum junction temperature. v dd = 3 0v, starting t j =25 , l= tbd , rg= 0 , i as i = 84a sd 84 a, di/dt 100 a/s, vdd v (br)dss , t j 1 50 . free datasheet http://www.datasheet-pdf.com/
device s pecification APQ84SN06AH 60v / 84a n - channel mosfet rev c 2 / 8 4 thermal characteristics symbol parameter APQ84SN06AH - xxm0 units APQ84SN06AH - xxj0 to - 220 t yp. m ax. r jc thermal resistance, junction - to - case -- 1.25 c/w r ja therm al resistance, junction - to - ambient -- 62.5 c/w 5 electrical characteristics t c = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain - source breakdown voltage v gs = 0 v, i d 60 = 250 a -- -- v i dss gate to source leakage current v ds = 60 v, v gs -- = 0 v -- 2 5 a i gssf gate - body leakage current, forward v gs = 20 v, v ds -- = 0 v -- 100 na i gssr gate - body leakage current, reverse v gs = - 2 0 v, v ds -- = 0 v -- - 100 na on ch aracteristics v gs(th) gate threshold voltage v ds = v gs , i d 2.0 = 250 a -- 4.0 v r ds(on) static drain - source on - resistance v gs = 10 v, i d -- = 42 a 9 12 m g fs forward transconductance v ds = 10 v, i d 69 = 32.5 a -- -- s dynamic characteristics c iss input capacitance v ds = 30 v, v gs f = 1.0 mhz = 0 v, -- 3200 -- pf c output capacitance oss -- 687 -- pf c rss reverse transfer capacitance -- 135 -- pf switching characteristics t d(on) turn - on dela y time v dd = 30 v, i d r = 30 a, g = 4.7 ,r d v = 1 gs -- =10v 11 -- ns t turn - on rise time r -- 75 -- ns t d(off) turn - off delay time -- 45 -- ns t f turn - off fall time -- 50 -- ns q g total gate charge v ds = 30 v, i d v = 30 a, gs -- = 10 v -- 125 nc q gs gate - source charge -- -- 25 nc q gd gate - drain charge -- -- 40 nc drain - source diode characteristics and maximum ratings i s maximum continuous drain - source diode forward current -- -- 84 a i maximum pulsed drain - source diode fo rward current sm -- -- 336 a v drain - source diode forward voltage sd v gs = 0 v, i s -- = 2 5 a -- 1. 5 v free datasheet http://www.datasheet-pdf.com/
device s pecification APQ84SN06AH 60v / 84a n - channel mosfet rev c 3 / 8 notes: repetitive rating: pulse width limited by maximum junction temperature. v dd = 3 0v, starting t j =25 , l= tbd , r g = 0 , i as i = 84a sd 84 a, di/dt 100 a/s, v dd v (br)dss , t j pulse test: pulse width 300s, duty cycle 2%. depend on ft test. 1 50 cp test free datasheet http://www.datasheet-pdf.com/
device s pecification APQ84SN06AH 60v / 84a n - channel mosfet rev c 4 / 8 free datasheet http://www.datasheet-pdf.com/
device s pecification APQ84SN06AH 60v / 84a n - channel mosfet rev c 5 / 8 free datasheet http://www.datasheet-pdf.com/
device s pecification APQ84SN06AH 60v / 84a n - channel mosfet rev c 6 / 8 6 package dimensions APQ84SN06AH - xxm0 to - 2 20 to - 220 dimension dim millimeters min max typ. a 10. 04 10. 41 10.23 b 3. 66 3.8 8 3.77 c 2.50 2. 84 2.67 d 3. 31 4.50 3.91 e 0.70 0.9 1 0.81 f 2.54(typ.) 2.54 g 5.08(typ.) 5.08 h 1 3.47 1 4.20 13.84 i 8.50 9.00 8.80 j 14.80 15. 49 15.15 k 4. 32 4.5 7 4.45 l 1.2 2 1. 42 1.30 m 28. 27 29.69 28.98 n 2.40 2.90 2.65 o 0.3 6 0. 53 0.45 p 5.97 6. 47 6.22 q 1.15 1.45 1.30 free datasheet http://www.datasheet-pdf.com/
device s pecification APQ84SN06AH 60v / 84a n - channel mosfet rev c 7 / 8 apq84 sn06ah - xxj0 to - 220 to - 220 dimension dim millimeters min max typ. a 10.01 10.31 10.16 b 3.66 3.94 3.80 c 2.59 2.89 2.74 d 3 .5 3.96 3.73 e 0.70 0.90 0.80 f 2.54 typ. g 4.98 5.18 5.08 h 13.4 13.8 13.6 i 8.5 8.9 8.70 j 14.65 15.35 15.05 k 4.47 4.67 4.57 l 1.22 1.42 1.32 m 28.05 29.15 28.60 n 2.52 2.82 2.67 o 0.31 0.53 0.42 p 6.10 6.50 6.30 q 1.17 1.37 1.27 free datasheet http://www.datasheet-pdf.com/
device s pecification APQ84SN06AH 60v / 84a n - channel mosfe t note the declared data are only a description of product, information furnished is believed to be accurate and reliable. however, alpha pacific assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of alpha pacific. alpha p a cific reserves the right to make changes on this specific a tion without notice at any time. this publication supersedes and replaces all information previously supplied. all alpha pacific products are not authorized for use as critical components in life support devices or sy stems, except by a written approval of alpha p a cific. reprinting this data sheet - or parts of it - is only allowed with a license of alpha pacific. contact alpha pacific technologies co., ltd 3f - 6, no.18, lane 609, sec.5 chung sin road, shan chang city taipei - hsien, taiwan, r.o.c tel +886 - 2 - 2999 5456 fax +886 - 2 - 2999 5270 internet www.a pttw .com rev c 8 / 8 free datasheet http://www.datasheet-pdf.com/
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